Emby / EUV
0.33 NA EUV systems for high-volume manufacturing
3D modeling of EUV photoresist using the multivariate Poisson propagation model
28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography
Actinic mask imaging using EUV ptychography microscope
Advances toward high power EUV sources for EUVL scanners for HVM in the next decade and beyond
Alternative developer solution_process for EUV lithography- ethyltrimethylammonium hydroxide (ETMAH)
Carbon nanotube EUV pellicle tunability and lifetime
Characterization of secondary electron blur via determination of electron attenuation length
CNT pellicles- Imaging results of the first full-field EUV exposures
Defect repairs for the extreme ultraviolet mask
The development progress of the high power LPP-EUV light source using a magnetic field
Effect of contaminants on pellicle lifetime for EUV lithography
Effect of high NA “half-field” printing on overlay error
Elucidating the radiation chemistry of prototypical tin-oxo resist with first-principles computations
Enabling non-actinic EUV mask inspection using carbon nanotube pellicle
Enhancing lithographic performance by new EUV photomask materials
EUV dark field lithography- extreme resolution by blocking 0th order
EUV lithography- past, present and future
EUV scattering from CNT pellicles- measurement and control
EUV single exposure via patterning at aggressive pitch
Experimental validation of particle impact on thermo-mechanical behavior of EUV pellicle
Extending 0.33 NA EUVL to 28 nm pitch using alternative mask and controlled aberrations
Fabrication and evaluation of nickel-based high-k mask for high numerical aperture extreme ultraviolet lithography
The future of compute- how the data transformation is reshaping VLSI
Gaussian random field EUV stochastic models, their generalizations and lithographically meaningful stochastic metrics
High-NA EUV lithography exposure tool- key advantages and program progress
Imaging enhancement (low k1 imaging) in EUV lithography- current status and future resolution enhancement techniques
Influence of temperature, hydrogen ions, and hydrogen radicals on Sn etching
Introduction of fully automated EUV pellicle mounter and demounter (EPMD)
Investigation into a prototype EUV attenuated phase-shift mask
Investigation of waveguide modes in EUV mask absorbers
Laser produced plasma EUV sources for N5 HVM and beyond- performance, availability and technology innovation
Laser-assisted discharge produced plasma (LDP) EUV source for actinic patterned mask inspection (APMI) (Conference Presentation)
Lensless EUV mask inspection for anamorphic patterns
Mask is key to unlock full EUVL potential
Measuring and analyzing contact hole variations in EUV lithography
Measuring EUV mask
Metal layer single EUV expose at pitch 28- how bright field and NTD resist advantages align
Modeling Sn scattering through hydrogen using DFT potentials
Modeling stochastic effects of exposure_diffusion and dissolution on missing contacts
Morphology change and release of tin and lead micro-particles from substrates in hydrogen plasma
Nanophotonics as computing machines
A new era for AI HPC and IC technologies in the transition to an intelligent digital world
Novel processing technologies for advanced EUV patterning materials
NXE-3400 OPC process monitoring- model validity vs process variability
Optical design of EUV attenuated PSM for contact-hole applications
Optimization of the EUV contact layer process for 7nm FPGA production
Particle removal tool to repair particle defects on EUV reticles
Performance of stacked nanosheet gate all around FET’s with EUV patterned gate and sheets
Plasma etch solutions for EUV patterning- defect challenges
Predicting very rare stochastic defects in EUVL processes for full-chip correction and verification
Progress on EUV pellicle and pellicle infrastructure for high volume manufacturing
Regression analysis of photodecomposable quencher concentration effects on chemical gradient in chemically amplified extreme ultraviolet resist processes
The road towards aggressive pitch scaling with single exposure EUV
Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations
Stochastic defect criticality prediction enabled by physical stochastic modeling and massive metrology
Two-dimensional feature stochastic printing with mask deficiencies in high-NA EUV
Update of -300W high power LPP-EUV source challenge III for semiconductor HVM
Wafer heating analysis with pattern variation in EUVL