Emby / Optical Lithography
Advanced ILT solutions to manufacture photonics designs
Advanced spectral engineering- a new way of process improvements by laser spectra optimization for optical lithography
The application of a new stochastic search algorithm “Adam” in inverse lithography technology (ILT) in critical recording head fabrication process
ArF lightsource “GT66A” for next-generation immersion lithography enhancing EPE and CD performance
Contour-based model calibration to a minimum number of patterns
Effective data sampling techniques for machine learning OPC in full chip production
Error modeling and accuracy breakdown in optical overlay metrology for advanced nodes
Extending DUV productivity and overlay through joint dry and immersion scanner advancements
Fast prediction of process variation band through machine learning models
Fast rigorous modeling of photoresist in lithography
Full chip computational lithography for KrF
High-resolution patterning for panel level packaging
Increased OPC modeling accuracy of deformation effects in positive-tone development photoresists
Innovative dual mark design for alignment verification and process monitoring in advanced lithography
Latest ArF light source with speckle reduction technology for immersion lithography improving chip yield
Lithocell availability improvement through light source maintenance cycle improvement and optimization and its availability impact analysis for cutting-edge ArFi light source
Lithography tool improvement at productivity and performance with data analysis and machine learning
Machine learning ILT for memory customers
New scaling enablers in computational lithography
Optimization of accurate resist kernels through convolutional neural network
Qualification of small alignment mark by on-product overlay performance
Recent developments and concepts in optical exposure technology
SRAF placement with generative adversarial network
A study on various curvilinear data representations and their impact on mask manufacturing flow
Test pattern extraction for lithography modeling under design rule revisions